| 000 | 00763nam a2200253u 4500 | ||
|---|---|---|---|
| 001 | 00636541 | ||
| 003 | PWmBRO | ||
| 005 | 20240602101145.0 | ||
| 008 | 850219s1986 nyua b 00100 eng | ||
| 020 | _a2881241093 (Switzerland) | ||
| 039 | 0 |
_a2 _b3 _c3 _d3 _e3 |
|
| 050 | 0 |
_aQC611.6.D4 _bD418 1986 |
|
| 082 | 0 | _a537.6/22�19 | |
| 090 | _b537.622/D311 | ||
| 245 | 0 | 0 |
_aDeep centers in semiconductors : _ba state of the art approach / _cedited by Sokrates T. Pantelides. |
| 260 | 0 |
_aNew York : _bGordon and Breach, _cc1986. |
|
| 300 |
_axi, 777 p. : _bill. |
||
| 650 | 0 |
_aSemiconductors _xDefects |
|
| 650 | 0 | _aElectron donor-acceptor complexes | |
| 650 | 0 | _aImpurity centers | |
| 700 | 1 | 0 | _aPantelides, Sokrates T. |
| 942 | _2ddc | ||
| 994 | 0 | 1 | _aT1001 054 007 |
| 999 |
_c37673 _d37673 |
||